High pressure anomalies in exfoliated MoSe2: Resonance Raman and X-ray diffraction studies
Abstract
Detailed high pressure Resonance Raman (RR) Spectroscopy and X-ray diffraction (XRD) studies are carried out on 3-4 layered MoSe2 obtained by liquid exfoliation. Analysis of ambient XRD pattern and RR spectra indicate the presence of a triclinic phase along with its parent hexagonal phase. Pressure evolution of prominent Raman modes and their full width at half maximum (FWHM) show slope changes at about 13 GPa and 33 GPa, respectively. Slope change in the linear behavior of reduced pressure (H) with respect to Eulerian strain (fE) is observed at about 13 GPa. A minimum in the FWHM values of E2g1 and A2u2 modes at the same pressure indicate to an electronic topological transition (ETT). Above 33 GPa the sample completely gets converted to the triclinic structure, which indicates the importance of strain in structural as well as electronic properties of two dimensional materials.