Modulation of magnon spin transport in a magnetic gate transistor

Abstract

We demonstrate a modulation of up to 18% in the magnon spin transport in a magnetic insulator (Y$_{3}$Fe$_{5}$O$_{12}$, YIG) using a common ferromagnetic metal (permalloy, Py) as a magnetic control gate. A Py electrode, placed between two Pt injector and detector electrodes, acts as a magnetic gate in our prototypical magnon transistor device. By manipulating the magnetization direction of Py with respect to that of YIG, the transmission of magnons through the Py|YIG interface can be controlled, resulting in a modulation of the non-equilibrium magnon density in the YIG channel between the Pt injector and detector electrodes. This study opens up the possibility of using the magnetic gating effect for magnon-based spin logic applications.