Growth and Characterization of Polycrystalline NbO2 Thin Films on Crystalline and Amorphous Substrates

Abstract

NbO2 is a potential material for nanometric memristor devices, both in the amorphous and the crystalline form. We fabricated NbO2 thin films using RF-magnetron sputtering from a stoichiometric target. The as-deposited films were amorphous regardless of the sputtering parameters. Post deposition vacuum annealing of the films was necessary to achieve crystallinity. A high degree of crystallinity was obtained by optimizing annealing duration and temperature. The resistivity of the material increases as it undergoes a structural transition from amorphous to crystalline with the crystalline films being one order of magnitude more resistive.