Study Of Surface Spin-Polarized Electron Accumulation In Topological Insulators Using Scanning Tunneling Microscopy
Abstract
The results of scanning tunneling microscopy experiments using iron-coated tungsten tips and current-carrying bismuth selenide (Bi2Se3) samples are reported. Asymmetry in tunneling currents with respect to the change in the direction of bias currents through Bi2Se3 samples has been observed. It is argued that this asymmetry is the manifestation of surface spin-polarized electron accumulation caused by the ninety-degree electron spin-momentum locking in the topologically protected surface current mode. It is demonstrated that the manifestation of surface spin-polarized electron accumulation is enhanced by tin doping of Bi2Se3 samples. Furthermore, the appearance of spin-dependent density of states in current carrying Bi2Se3 samples has also been observed.
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