Bandgap Measurement of Reduced Graphene Oxide Monolayers through Scanning Tunnelling Spectroscopy

Abstract

Most popular atomically thin carbon material, called graphene, has got no band gap and this particular property of graphene makes it less useful from the aspect of nanoscale transistor devices. The band gap can be introduced in the graphene if it is synthesized through chemical route. First, Graphene Oxide (GO) is made which further go under reduction and turns into Reduced Graphene Oxide (RGO). Band structure investigation of monolayer sheets of reduced graphene oxide (RGO) by Scanning Tunneling Spectroscopy (STS) has been investigated here. The GO sheets are 1-1.2 nm thick and become more thinner after reduction. The band gap of GO was found in the range of 0.8 eV. The RGO showed up a variety of band structure. RGO opens a new field of study of atomically thin layers of carbon because it has got non zero band gap which is not the case for graphene.