Evolution of high-frequency Raman modes and their doping dependence in twisted bilayer MoS2

Abstract

Twisted van der Waals heterostructures unravel a new platform to study strongly correlated quantum phases. The interlayer coupling in these heterostructures is sensitive to twist angles (θ) and key to controllably tune several exotic properties. Here, we demonstrate a systematic evolution of the interlayer coupling strength with twist angle in bilayer MoS2 using a combination of Raman spectroscopy and classical simulations. At zero doping, we show a monotonic increment of the separation between the A1g and E12g mode frequencies as θ decreases from 10 1, which saturates to that for a bilayer at small twist angles. Furthermore, using doping-dependent Raman spectroscopy we reveal θ dependent softening and broadening of the A1g mode, whereas the E12g mode remains unaffected. Using first principles-based simulations we demonstrate large (weak) electron-phonon coupling for the A1g (E12g) mode explaining the experimentally observed trends. Our study provides a non-destructive way to characterize the twist angle, the interlayer coupling and establishes the manipulation of phonons in twisted bilayer MoS2 (twistnonics).

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