The disordered lattice free field pinning model approaching criticality

Abstract

We continue the study, initiated in [Giacomin and Lacoin, JEMS 2018], of the localization transition of a lattice free field φ=(φ(x))x ∈ Zd, d 3, in presence of a quenched disordered substrate. The presence of the substrate affects the interface at the spatial sites in which the interface height is close to zero. This corresponds to the Hamiltonian Σx∈ Zd (β ωx+h)δx, where δx=1[-1,1](φ(x)), and (ωx)x∈ Zd is an IID centered field. A transition takes place when the average pinning potential h goes past a threshold hc(β): from a delocalized phase h<hc(β), where the field is macroscopically repelled by the substrate, to a localized one h>hc(β) where the field sticks to the substrate. In [Giacomin and Lacoin, JEMS 2018] the critical value of h is identified and it coincides, up to the sign, with the -Laplace transform of ω=ωx, that is -hc(β)=λ(β):= E[eβω]. Here we obtain the sharp critical behavior of the free energy approaching criticality: u 0 F(β,hc(β)+u)u2= 12\, Var(eβ ω-λ(β)). Moreover, we give a precise description of the trajectories of the field in the same regime: the absolute value of the field is 2σd2(h-hc(β)) to leading order when h hc(β) except on a vanishing fraction of sites (σd2 is the single site variance of the free field).

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