Electron-phonon coupling and a resonant-like optical observation of a band inversion in topological crystalline insulator Pb1-xSnxSe
Abstract
The optical reflectivity of Pb0.865Sn0.135Se and Pb0.75Sn0.25Se solid solutions was measured in the THz spectral region energetically corresponding to bulk optical phonon excitations and in the temperature range from 40 K to 280 K. The analysis of Pb0.75Sn0.25Se data performed within the dynamic dielectric function formalism revealed a new effect due to the electron-phonon coupling resulting in resonant changes of LO phonon frequency for energy gap equal to zero or to LO phonon energy. This effect is absent for Pb0.865Sn0.135Se that exhibits an open energy gap with trivial band ordering at all temperatures. These results show that reflectivity in the THz range constitute a versatile experimental method for precise determination of band inversion in narrow-gap topological materials. For Pb0.75Sn0.25Se the transition from trivial insulator to topological crystalline insulator phase takes place at temperature T0 = (172 2) K.