Niobium Dayem nano-bridge Josephson field-effect transistors
Abstract
We report on the first realization of Nb-based all-metallic gated Dayem nano-bridge field-effect transistors (Nb-FETs). These Josephson devices operate up to a temperature of 3 K, and exhibit full suppression of the supercurrent thanks to the application of a control gate voltage. The dependence of the kinetic inductance and of the transconductance on gate voltage promises a performance already on par with so far realized metallic Josephson transistors, and let to foresee the implementation of a superconducting digital logic based on Nb-FETs. We conclude by showing the practical realization of a scheme implementing an all-metallic gate-tunable half-wave rectifier to be used either for superconducting electronics or for photon detection applications.