High-quality electrical transport using scalable CVD graphene
Abstract
Producing and manipulating graphene on fab-compatible scale, while maintaining its remarkable carrier mobility, is key to finalize its technological application. We show that a large-scale approach (chemical vapor deposition on Cu followed by polymer-mediated semi-dry transfer) yields single-layer graphene crystals fully comparable, in terms of electronic transport, to micro-mechanically exfoliated flakes. hBN is used to encapsulate the graphene crystals - without taking part to their detachment from the growth catalyst - and study their intrinsic properties in field-effect devices. At room temperature, the electron-phonon coupling sets the mobility to 1.3 ×105 cm2V-1s-1 at 1011 cm-2 concentration. At cryogenic temperatures, the mobility ( > 6×105 cm2V-1s-1 at 1011 cm-2) is limited by the devices' physical edges, and charge fluctuations < 7×109 cm-2 are detected. Under perpendicular magnetic fields, we observe early onset of Landau quantization (B50 mT) and signatures of electronic correlation, including the fractional quantum Hall effect.