Growth and Characterization of Metalorganic Vapor-Phase Epitaxy-Grown eta-(AlxGa1-x)2O3/eta-Ga2O3 Heterostructure Channels
Abstract
We report on the growth and characterization of metalorganic vapor-phase epitaxy-grown eta-(AlxGa1-x)2O3/eta-Ga2O3 modulation-doped heterostructures. Electron channel is realized in the heterostructure by utilizing a delta-doped eta-(AlxGa1-x)2O3 barrier. Electron channel characteristics are studied using transfer length method, capacitance-voltage and Hall measurements. Hall sheet charge density of 1.06 x 1013 cm-2 and mobility of 111 cm2/Vs is measured at room temperature. Fabricated transistor showed peak current of 22 mA/mm and on-off ratio of 8 x 106. Sheet resistance of 5.3 k/Square is measured at room temperature, which includes contribution from a parallel channel in eta-(AlxGa1-x)2O3.
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