Quantum-limit Hall effect with large carrier density in topological semimetals
Abstract
The quantum-limit Hall effect at = nh/eB O(1) that hosts a variety of exotic quantum phenomena requires demanding strong magnetic field B and low carrier density n. We propose to realize quantum-limit Hall effect even in the presence of large carrier density residues ne and nh relative to the magnetic field B in topological semimetals, where a single Fermi surface contour allow both electron-type and hole-type carriers and approaches charge neutrality as ne nh. The underlying filling factor = |ne-nh|h/eB explicitly violates the Onsager's relation for quantum oscillations.
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