Gate-Tunable Quantum Anomalous Hall Effects in MnBi2Te4 Thin Films
Abstract
The quantum anomalous Hall (QAH) effect has recently been realized in thin films of intrinsic magnetic topological insulators (IMTIs) like MnBi2Te4. Here we point out that that the QAH gaps of these IMTIs can be optimized, and that both axion insulator/semimetal and Chern insulator/semimetal transitions can be driven by electrical gate fields on the 10 meV/nm scale. This effect is described by combining a simplified coupled-Dirac-cone model of multilayer thin films with Schr\"odinger-Poisson self-consistent-field equations.
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