Schottky-diode design for the world's leading telecommunication

Abstract

The Schottky diode, BN/GaN layered composite contacting to bulk aluminum, is theoretically plausible to harvest wireless energy above X-band. According to our first principle calculation, the insertion of GaN layers dramatically influences the optical properties of the layered composite. The relative dielectric constant of BN/GaN layered composite as a function of layer-to-layer separation is investigated where the optimized dielectric constant is 3.1. Furthermore, we design another Schottky diode via nanostructuring. Our first principle calculation suggests that the relative dielectric constant of boron nitride monolayer can be minimized to 1.5 only if it is deposited on aluminum monolayer. It is rare to find a semiconductor with the dielectric constant close to 1 which may push the cut-off frequency of Al/BN-based rectenna to the high-band 5G network.