Doping-induced topological transition and enhancement of thermopower in the Dirac-semimetal system Cd3-xZnxAs2

Abstract

Cd3As2 is one of the prototypical topological Dirac semimetals. Here, we manipulate the band inversion responsible for the emergence of Dirac nodes by alloying Cd3As2 with topologically trivial Zn3As2. We observe the expected topological phase transition around a Zn concentration of x 1 while the carrier density monotonically decreases as x is increased. For larger x, the thermoelectric figure of merit exhibits comparably large values exceeding 0.3 at room temperature, due to the combined effects of a strong enhancement of the thermopower, an only moderate increase of the resistivity, and a suppression of the thermal conductivity. Complementary quantum-oscillation data and optical-conductivity measurements allow to infer that the enhanced thermoelectric performance is due to a flattening of the band structure in the higher-x region in Cd3-xZnxAs2.

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