Effects of Proton Irradiation on Hole Carrier Transport in Hydrogen-Terminated Diamond Surfaces

Abstract

In this letter, we report the effects of irradiating hydrogen-terminated diamond surfaces with protons. We study the electrical behavior of the two-dimensional hole gas that forms on the diamond surface as a result of hydrogen-termination. Four diamond samples, two of which were passivated with Al2O3 and the other two unpassivated, were irradiated with 2 MeV protons at two fluences, 0.5x10^14 and 1.0x10^14 /cm^2. The hole conductivity degraded at a higher proton fluence, which is attributed to the reduction of the mobility caused by enhanced hole scattering. Both passivated and unpassivated samples exhibited a reduction in the mobility, which can be explained by charging effects of the Al2O3 (for the passivated samples) and degradation of the hydrogen-terminated surface (for the unpassivated samples). To our knowledge, this is the first reported data on 2 MeV proton tolerance of hydrogen-terminated diamond surfaces.