Controlling the electronic interface properties of AlOx/SrTiO3 heterostructures
Abstract
Depositing disordered Al on top of SrTiO3 is a cheap and easy way to create a two-dimensional electron system in the SrTiO3 surface layers. To facilitate future device applications we passivate the heterostructure by a disordered LaAlO3 capping layer to study the electronic properties by complementary x-ray photoemission spectroscopy and transport measurements on the very same samples. We also tune the electronic interface properties by adjusting the oxygen pressure during film growth.
0
Turn this paper into a lesson
ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.