Thickness Dependence of Magneto-transport Properties in Tungsten Ditelluride
Abstract
We investigate the electronic structure of tungsten ditelluride (WTe2) flakes with different thicknesses in magneto-transport studies. The temperature-dependent resistance and magnetoresistance (MR) measurements both confirm the breaking of carrier balance induced by thickness reduction, which suppresses the `turn-on' behavior and large positive MR. The Shubnikov-de-Haas oscillation studies further confirm the thickness-dependent change of electronic structure of WTe2 and reveal a possible temperature-sensitive electronic structure change. Finally, we report the thickness-dependent anisotropy of Fermi surface, which reveals that multi-layer WTe2 is an electronic 3D material and the anisotropy decreases as thickness decreases.
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