Tunable Feshbach resonances and their spectral signatures in bilayer semiconductors

Abstract

Feshbach resonances are an invaluable tool in atomic physics, enabling precise control of interactions and the preparation of complex quantum phases of matter. Here, we theoretically analyze a solid-state analogue of a Feshbach resonance in two dimensional semiconductor heterostructures. In the presence of inter-layer electron tunneling, the scattering of excitons and electrons occupying different layers can be resonantly enhanced by tuning an applied electric field. The emergence of an inter-layer Feshbach molecule modifies the optical excitation spectrum, and can be understood in terms of Fermi polaron formation. We discuss potential implications for the realization of correlated Bose-Fermi mixtures in bilayer semiconductors.