Capacitively-coupled and inductively-coupled excitons in bilayer MoS2
Abstract
The interaction of intralayer and interlayer excitons is studied in a two-dimensional semiconductor, homobilayer MoS2. It is shown that the measured optical susceptibility reveals both the magnitude and the sign of the coupling constants. The interlayer exciton interacts capacitively with the intralayer B-exciton (positive coupling constant) consistent with hole tunnelling from one monolayer to the other. Conversely, the interlayer exciton interacts inductively with the intralayer A-exciton (negative coupling constant). First-principles many-body calculations show that this coupling arises via an intravalley exchange-interaction of A- and B-excitons.
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