Memristive Charge-Flux Interaction Still Makes It Possible To Find An Ideal Memristor

Abstract

In 1971, Chua defined an ideal memristor that links charge q and flux phi. In this work, we demonstrated that the direct interaction between physical charge q and physical flux phi is memristive by nature in terms of a time-invariant phi-q curve being nonlinear, continuously differentiable and strictly monotonically increasing. Nevertheless, this structure still suffers from two serious limitations: 1, a parasitic inductor effect, and 2. bistability and dynamic sweep of a continuous resistance range. Then we discussed how to make a fully-functioning ideal memristor with multiple or an infinite number of stable states and no parasitic inductance, and gave a number of suggestions, such as open structure, nanoscale size, magnetic materials with cubic anisotropy (or even isotropy), and sequential switching of the magnetic domains. At last, we responded to a recent challenge from arXiv.org that claims that the structure reported in our retracted JAP paper is simply an inductor with memory since it did not pass their designed capacitor-memristor circuit test. Contrary to their conjecture that an ideal memristor may not exist or may be a purely mathematical concept, we remain optimistic that researchers will discover an ideal memristor in nature or make one in the laboratory.