Well-posedness for the incompressible Hall-MHD system with initial magnetic field belonging to H32(R3)

Abstract

In this paper, we first prove the local well-posedness of strong solutions to the incompressible Hall-MHD system for initial data (u0,B0)∈ H12+σ(R3)× H32(R3) with σ∈ (0,2). In particular, if the viscosity coefficient is equal to the resistivity coefficient, we can reduce σ to 0 with the aid of the new formulation of the Hall-MHD system observed by Danchin and Tan (Commun Partial Differ Equ 46(1):31-65, 2021). Compared with the previous works, our local well-posedness results improve the regularity condition on the initial data. Moreover, we establish the global well-posedness for small initial data in H12+σ(R3)× H32(R3) with σ∈ (0,2), and get the optimal time-decay rates of solutions.

0

Turn this paper into a lesson

ArcXiv compiles a structured reading guide from this paper's metadata: plain-English importance, contributions, prerequisite concepts, which sections to read first, flashcards, and a quiz. Grounded in the abstract, never invented.

Discussion (0)

Sign in to join the discussion.

Loading comments…