Stacking-order effect on spin-orbit torque, spin-Hall magnetoresistance, and magnetic anisotropy in Ni$_{81}$Fe$_{19}$-IrO$_2$ bilayers

Abstract

The 5d transition-metal oxides have been an intriguing platform to demonstrate efficient charge to spin current conversion due to a unique electronic structure dominated by strong spin-orbit coupling. Here, we report on stacking-order effect of spin-orbit torque (SOT), spin-Hall magnetoresistance, and magnetic anisotropy in bilayer Ni$_{81}$Fe$_{19}$-5d iridium oxide, IrO$_2$. While all the IrO$_2$ and Pt control samples exhibit large dampinglike-SOT generation stemming from the efficient charge to spin current conversion, the magnitude of the SOT is larger in the IrO$_2$ (Pt)-bottom sample than in the IrO$_2$ (Pt)-top one. The fieldlike-SOT has even more significant stack order effect, resulting in an opposite sign in the IrO$_2$ samples in contrast to the same sign in the Pt samples. Furthermore, we observe that the magnetic anisotropy energy density and the anomalous Hall effect are increased in the IrO$_2$ (Pt)-bottom sample, suggesting enhanced interfacial perpendicular magnetic anisotropy. Our findings highlight the significant influence of the stack order on spin transport and magnetotransport properties of Ir oxide/ferromagnet systems, providing useful information on design of SOT devices including 5d transition-metal oxides.