Vapor transport growth of MnBi2Te4 and related compounds
Abstract
Motivated by fine tuning of the magnetic and topological properties of MnBi2Te4 via defect engineering, in this work, we report the crystal growth of MnBi2Te4 and related compounds using vapor transport method and characterization of vapor transported crystals by measuring elemental analysis, magnetic and transport properties, and scanning tunneling microscopy. For the growth of MnBi2Te4 single crystals, I2, MnI2 , MnCl2, TeCl4, or MoCl5 are all effective transport agents; chemical transportation occurs faster in the presence of iodides than chlorides. MnBi2Te4 crystals can be obtained in the temperature range 500-590 using I2 as the transport agent. We further successfully grow MnSb2Te4, MnBi2-xSbxTe4, and Sb-doped MnBi4Te7 crystals. A small temperature gradient <20 between the hot and cold ends of the growth cmpoule is critical for the successful crystal growth of MnBi2Te4 and related compounds. Compared to flux grown crystals, vapor transported crystals tend to be Mn stoichiometric, and Sb-bearing compositions have more Mn/Sb site mixing. The vapor transport growth provides a new materials synthesis approach to fine tuning the magnetic and topological properties of these intrinsic magnetic topological insulators.
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