Ambipolar Property of Isolated Hydrogen in Oxide Materials Revealed by Muon

Abstract

The study on the electronic state of muon as pseudo-hydrogen (represented by the elemental symbol Mu) has long been appreciated as one of the few methods to experimentally access the electronic state of dilute hydrogen (H) in semiconductors and dielectrics. Meanwhile, theoretical predictions on the electronic state of H in these materials by first-principles calculations using density functional theory (DFT) do not always agree with the observed states of Mu, standing as an obstacle to integrating the findings of both Mu and H. In this paper, we provide resolution to this problem by a semi-quantitative model that enables systematic understanding of the electronic states of Mu in most oxides.