Synthesis and crystal growth of novel layered bismuthides ATM2Bi2, (A = K, Rb; TM = Zn, Cd) with significant electron-deficient structure

Abstract

Layered bismuthides of the family ATM2Bi2 are showing very interesting structural and physical properties. Here, we report crystal growth and characterization of new ternary layered bismuthides: RbCd2Bi2, RbZn2Bi2 and KZn2Bi2. Single crystals were grown by self-flux technique. As grown crystals were characterized by combination of powder X-ray diffraction, scanning electron microscopy, energy-dispersive X-ray spectroscopy and single crystal X-ray diffraction. All novel compounds crystallize in layered ThCr2Si2 structure type with plate-like morphology with weak bonding between layers. Significant structural difference between RbCd2Bi2 and AZn2Bi2 (A=K, Rb) was found.