Observation of Silicon Nitride Nanomechanical Resonator Actuation Using Capacitive Substrate Excitation

Abstract

We observe the actuation of silicon nitride (SiN) nanomechanical resonators by electrical excitation of metal-dielectric-semiconductor (MDS) capacitors on their supporting silicon substrate. We develop first-principle models explaining this actuation mechanism by acoustic waves resulting from voltage-dependent electrostatic forces in the MDS capacitors. Models are developed for actuation in the charge accumulation (Ni-pSi) and charge depletion (Al-pSi) regimes. Experimental observations confirm our prediction that charge accumulation (Ni-pSi) is more efficient at actuation than charge depletion. For a 2 V actuation signal, Ni-pSi capacitors achieve 10 nm actuation amplitude in square (1.7 $\times$ 1.7 mm) low-stress (~100 MPa) SiN membrane resonators. In this case, electrical power dissipation in the chip is on the order of 0.1 $\mu$W, and spurious heating is less than 1 mK. Both these values could be further reduced by doping the substrate to minimize resistive dissipation. The actuation method is remarkably simple and only requires attachment of wires to the chip with vacuum-compatible nickel paste, with no extra photolithography step. All the chips presented in this work are fabricated in-house, and a detailed fabrication procedure is provided.