Exchange bias in van der Waals MnBi2Te4/Cr2Ge2Te6 heterostructure
Abstract
The layered van der Waals (vdW) material MnBi2Te4 is an intrinsic magnetic topological insulator with various topological phases such as quantum anomalous Hall effect (QAHE) and axion states. However, both the zero-field and high-temperature QAHE are not easy to realize. It is theoretically proposed that the exchange bias can be introduced in the MnBi2Te4/ferromagnetic (FM) insulator heterostructures and thus opens the surface states gap, making it easier to realize the zero-field or high-temperature QAHE. Here we report the electrically tunable exchange bias in the van der Waals MnBi2Te4/Cr2Ge2Te6 heterostructure. The exchange bias emerges over a critical magnetic field and reaches the maximum value near the magnetic band gap. Moreover, the exchange bias was experienced by the antiferromagnetic (AFM) MnBi2Te4 layer rather than the FM layer. Such van der Waals heterostructure provides a promising platform to study the novel exchange bias effect and explore the possible high-temperature QAHE.
Turn this paper into a full lesson
ArcXiv compiles a staged curriculum from this paper: 8-12 lessons across beginner → advanced, synthesised section guides, visuals, flashcards, a quiz, exercises, and on-demand deep dives per section. Grounded in the abstract, never invented.