Photonic p-n Junction: An Ideal Near-Field Heat Flux Modulator

Abstract

Using a pair of p- and n-type semiconductors separated by a nanoscale vacuum gap, we introduce an optoelectronics element prototype, "photonic p-n junction", as an analogue of the electronic p-n junction, which is demonstrated to serve as an ideal near-field heat flux modulator. The high modulation performance relies on the switch among three fundamental photon-carrier interaction modes (i.e., surface plasmon polaritons, symmetric depleted internal plasmon polaritons and symmetric accumulated surface plasmon polaritons) caused by the changes in hole and electron densities near the surfaces under a tunable bias. This prototype offers new thoughts not only for contactless thermal management at nanoscale but also for design of optoelectronics devices processing information carried by plasmon polaritons.