Hybrid electroluminescent devices composed of (In,Ga)N micro-LEDs and monolayers of transition metal dichalcogenides

Abstract

We demonstrate a novel electro-luminescence device in which GaN-based $\mu$-LEDs are used to trigger the emission spectra of monolayers of transition metal dichalcogenides, which are deposited directly on the $\mu$-LED surface. A special $\mu$-LED design enables the operation of our structures even in the limit of low temperatures. A device equipped with a selected WSe$_2$ monolayer flake is shown to act as a stand-alone, electrically-driven single-photon source.