Discovery of Superconductivity in Nb4SiSb2 with a V4SiSb2-Type Structure and Implications of Interstitial Doping on its Physical Properties
Abstract
We report on the discovery, structural analysis, and the physical properties of Nb4SiSb2 -- a hitherto unknown compound crystallizing in the V4SiSb2-type structure with the tetragonal space group I4/mcm and unit cell parameters a = 10.3638(2) A and c = 4.9151(2) A. We find Nb4SiSb2 to be a metal undergoing a transition to a superconducting state at a critical temperature of T c ≈ 1.6 K. The bulk nature of the superconductivity in this material is confirmed by the observation of a well defined discontinuity in specific heat with a normalized specific heat jump of C(T c)/γ T c = 1.33\, mJ\, mol-1\, K-2. We find that for Nb4SiSb2, the unoccupied sites on the 4b Wyckoff position can be partially occupied with Cu, Pd, or Pt. Low-temperature resistivity measurements show transitions to superconductivity for all three compounds at T c ≈\, 1.2\, K for Nb4Cu0.2SiSb2, and T c ≈\, 0.8\, K for Nb4Pd0.2SiSb2 as well as for Nb4Pt0.14SiSb2. The addition of electron-donor atoms into these void positions, henceforth, lowers the superconducting transition temperature in comparison to the parent compound.
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