Numerical modeling of CuSbSe2-based dual-heterojunction thin film solar cell with CGS back surface layer

Abstract

Ternary chalcostibite copper antimony selenide (CuSbSe2) is a promising absorber material for next generation thin film solar cells due to the non-toxic nature, earth-abundance, low-cost fabrication technique, optimum bandgap and high optical absorption coefficient of CuSbSe2. Conventional single heterojunction CuSbSe2 solar cells suffer from high recombination rate at the interfaces and the presence of a Schottky barrier at the back contact, which limit their power conversion efficiencies (PCEs). In this study, we propose a dual-heterojunction n-ZnSe/p-CuSbSe2/p+-CGS solar cell, having copper gallium selenide (CGS) as the back surface field (BSF) layer. The BSF layer absorbs longer wavelength photons through a tail-states-assisted (TSA) two-step upconversion process, leading to enhanced conversion efficiency. Numerical simulations were carried out using SCAPS-1D to investigate the performance of the proposed solar cell with respect to absorber layer thickness, doping concentrations and defect densities. The simulation results exhibit PCE as high as 43.77% for the dual-heterojunction solar cell as compared to 27.74% for the single heterojunction n-ZnSe/p-CuSbSe2 counterpart. The dual-heterojunction structure has, therefore, the potential to approach the Shockley-Queisser (SQ) detailed balance limit and can lead to extremely high PCEs in emerging thin film solar cells.