Investigation of role of antisite disorder in the pristine cage compound FeGa3
Abstract
The role of controlled disorder in the strong correlated narrow gap semiconductor candidate FeGa3 has been investigated. Polycrystalline samples were synthesized by the combination of arc-melting furnace and successive annealing processes. Deviations of the occupation number of Fe and Ga sites from those expected in the pristine compound were quantified with X-ray analysis. Besides that, electrical transport and magnetization measurements reveal that hierarchy in Fe and Ga site disorder tunes the ground state of FeGa3 from paramagnetic semiconducting to a magnetic metal. These findings are discussed within the framework of Anderson metal-insulator transitions and spin fluctuations.
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