Surface state mediated ferromagnetism in Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films

Abstract

A spontaneous ferromagnetic moment can be induced in Bi$_{2}$Te$_{3}$ thin films below a temperature T $\approx$ 16 K by the introduction of Mn dopants. We demonstrate that films grown via molecular beam epitaxy with the stoichiometry Mn$_{0.14}$Bi$_{1.86}$Te$_3$ maintain the crystal structure of pure Bi$_{2}$Te$_{3}$. The van der Waals nature of inter-layer forces in the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ crystal causes lattice mismatch with the underlayer to have a limited effect on the resulting crystal structure, as we demonstrate by thin film growth on tetragonal MgF$_{2}$ (110) and NiF$_{2}$ (110). Electronic transport and magnetic moment measurements show that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ thin films is enhanced as the Fermi level moves from the bulk conduction band and towards the bulk band gap, suggesting that electronic surface states play an important role in mediating the ferromagnetic order. Ferromagnetic Mn$_{0.14}$Bi$_{1.86}$Te$_3$/antiferromagnetic NiF$_{2}$ bilayers show evidence that the ferromagnetic moment of the Mn$_{0.14}$Bi$_{1.86}$Te$_3$ film is suppressed, suggesting the existence of an interface effect between the two magnetic layers.