Strain and composition dependencies of the near bandgap optical transitions in monoclinic (AlxGa1-x)2O3 alloys with coherent biaxial in-plane strain on (010) Ga2O3

Abstract

The bowing of the energy of the three lowest band-to-band transitions in β-(AlxGa1-x)2O3 alloys was resolved using a combined density functional theory (DFT) and generalized spectroscopic ellipsometry (GSE) approach. The DFT calculations of the electronic band structure of both, β-Ga2O3 and θ-Al2O3, allow extracting of the linear portion of the energy shift in the alloys, and provide a method for quantifying the role of coherent strain present in the β-(AlxGa1-x)2O3 thin films on (010) β-Ga2O3 substrates. The energies of band-to-band transitions were obtained using the spectroscopic ellipsometry eigenpolarization model approach [A. Mock et al., Phys. Rev. B 95, 165202 (2017)]. After subtracting the effects of strain which also induces additional bowing and after subtraction of the linear portion of the energy shift due to alloying, the bowing parameters associated with the three lowest band-to-band transitions in monoclinic β-(AlxGa1-x)2O3 are found.

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