Superconductivity induced by the inter-valley Coulomb scattering in a few layers of graphene

Abstract

We study the inter-valley scattering induced by the Coulomb repulsion as a purely electronic mechanism for the origin of superconductivity in few layers of graphene. The pairing is strongly favored by the presence of van Hove singularities (VHS's) in the density of states (DOS). We consider three different hetherostructures: twisted bilayer graphene (TBG), rhombohedral trilayer graphene (RTG) and Bernal bilayer graphene (BBG). We obtain trends and estimates of the superconducting (SC) critical temperature in agreement with the experimental findings, which might identify the inter-valley Coulomb scattering as a universal pairing mechanism in few layers of graphene.