Electric field tunable multi-state tunnel magnetoresistances in 2D van der Waals magnetic heterojunctions

Abstract

Magnetic tunnel junction (MTJ) based on van der Waals (vdW) magnetic layers has been found to present excellent tunneling magnetoresistance (TMR) property, which has great potential applications in field sensing, non-volatile magnetic random access memories, and spin logics. Although MTJs composed of multilayer vdW magnetic homojunction have been extensively investigated, the ones composed of vdW magnetic heterojunction is still to be explored. Here we use first-principles approaches to reveal that the magnetic heterojunction MTJs have much more distinguishable TMR values than the homojunction ones. In the MTJ composed of bilayer CrI3/bilayer Cr2Ge2Te6 heterojunction, we find there are eight stable magnetic states, leading to six distinguishable electronic resistances. As a result, five sizable TMRs larger than 300% can be obtained (the maximum TMR is up to 620,000%). Six distinguishable memories are obtained which is two times larger than that of a four-layered homojunction MTJ. The underlying relationships among magnetic state, spin-polarized band structures, and transmission spectrums are further revealed to explain the multiple TMR values. We also find that the magnetic states and thus TMRs can be efficiently modulated by an external electric field. This study opens an avenue to the design of high-performance MTJ devices based on vdW heterojunctions.