Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers

Abstract

The influence of illumination on a high mobility two-dimensional electron gas with high concentration of charge carriers is studied in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers at a temperature T = 4.2 K in magnetic fields B < 2 T. It is shown that illumination at low temperatures in the studied heterostructures leads to an increase in the concentration, mobility, and quantum lifetime of electrons. An increase in the quantum lifetime due to illumination of single GaAs quantum wells with modulated superlattice doping is explained by a decrease in the effective concentration of remote ionized donors.