Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V5S8 Single Crystal
Abstract
The compound V5S8 can also be represented by V1.25S2, a transition metal dichalcogenide (TMDC) with excess V. Very few TMDCs show magnetism and/or Kondo effect. Among them, the sister compounds VSe2 and VTe2 are recently proved to show ferromagnetism in addition to the low-temperature resistivity upturn due to Kondo effect. In this study, we show Kondo effect in V5S8 originated from the antiferromagnetic exchange interactions among the intercalated V atoms below the Neel (TN) temperature of 27 K. We find isotropic magnetic properties above TN, while a strong magnetic anisotropy is noticed below TN. In addition, below TN we find an out-of-plane (H c) spin-flop transition triggered at a critical field of 3.5 T that is absent from the in-plane (H c). Angle-dependent magnetoresistance is found to be highly anisotropic in the antiferromagnetic state.