Near coincidence of metal-insulator transition and quantum critical fluctuations: Electronic ground state and magnetic order in Fe1-xCoxSi
Abstract
We present a detailed study of the electronic and magnetic ground state properties of Fe1-xCoxSi using a combination of macroscopic and microscopic experimental techniques. From these experiments we quantitatively characterize the metal-insulator transition and magnetic/non-magnetic quantum phase transition occurring at low doping levels in Fe1-xCoxSi. From our study, we find a surprising closeness of the critical composition of the metal-insulator transition at xMIT = 0.014 and the quantum phase transition at xLRO 0.024-0.031. It suggests that these effects are cooperative and depend on each other.
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