Magnetoresistive RAM with n-doped AlGaAs/GaAs writing/reading channels

Abstract

We show that the tunable gate voltage in n-doped AlGaAs/GaAs QW (quantum well) is a key in designing an efficient and ultrafast MRAM (magnetoresistive random access memory). The Rashba spin-orbit coupling in such QWs can be tuned appropriately by the gate voltage to create an intense spin-Hall field which in turns interacts with the ferromagnetic layer of the MRAM through the mechanism of spin orbit torque. The strong spin-Hall field leads to an infinitesimally small switching time of the MRAM. Our proposed MRAM is thus a better alternative to the conventional ferromagnetic/spin-Hall effect bi-layers MRAM for the reason that the switching time can be varied with ease, which is unfeasible in the later. Concisely, not only that this work signals a possibility to design an ultra-fast MRAM, but it also suggests a model to fabricate a tunable switching time MRAM.