A Bi-CMOS electronic-photonic integrated circuit quantum light detector

Abstract

Complimentary metal-oxide-semiconductor (CMOS) compatible quantum technology enables scalable integration with the classical readout and control electronics needed to build quantum computers. Homodyne detectors have applications across quantum technologies including quantum computers, and they comprise photonics and electronics. Here we report a quantum noise limited monolithic electronic-photonic integrated homodyne detector, with an overall footprint of $80~\mu\mathrm{m} \times 220~\mu\mathrm{m}$, fabricated in a 250~nm lithography bi-polar CMOS process. By monolithic integration of the electronics and photonics, overall capacitance is suppressed -- this is the main bottleneck to high bandwidth measurement of quantum light. We measure a 3~dB bandwidth of 19.8~GHz and a maximum shot noise clearance of 15~dB. This exceeds bandwidth limits of detectors with macroscopic electronic interconnects, including wirebonding and flip-chip bonding. This demonstrates CMOS electronic-photonic integration enhancing performance of quantum photonics.