The threshold of semiconductor nanolasers

Abstract

Nanolasers based on emerging dielectric cavities with deep sub-wavelength confinement of light offer a large light-matter coupling rate and a near-unity spontaneous emission factor, $\beta$. These features call for reconsidering the standard approach to identifying the lasing threshold. Here, we suggest a new threshold definition, taking into account the recycling process of photons when $\beta$ is large. This threshold with photon recycling reduces to the classical balance between gain and loss in the limit of macroscopic lasers, but qualitative as well as quantitative differences emerge as $\beta$ approaches unity. We analyze the evolution of the photon statistics with increasing current by utilizing a standard Langevin approach and a more fundamental stochastic simulation scheme. We show that the threshold with photon recycling consistently marks the onset of the change in the second-order intensity correlation, $g^{(2)}(0)$, toward coherent laser light, irrespective of the laser size and down to the case of a single emitter. In contrast, other threshold definitions may well predict lasing in light-emitting diodes. These results address the fundamental question of the transition to lasing all the way from the macro- to the nanoscale and provide a unified overview of the long-lasting debate on the lasing threshold.