Emergence of flat bands and their impact on superconductivity of Mo5Si3-xPx

Abstract

The first-principles calculations and measurements of the magnetic penetration depths, the upper critical field, and the specific heat were performed for a family of Mo5Si3-xPx superconducotrs. First-principles calculations suggest the presence of a flat band dispersion, which gradually shifts to the Fermi level as a function of phosphorus doping x. The flat band approaches the Fermi level at x 1.3, thus separating Mo5Si3-xPx between the purely steep band and the steep band/flat band superconducting regimes. The emergence of flat bands lead to an abrupt change of nearly all the superconducting quantities. In particular, a strong reduction of the coherence length and enhancement of the penetration depth λ result in nearly factor of three increase of the Ginzburg-Landau parameter =λ/ (from 25 for x 1.2 to 70 for x 1.4) thus initiating the transition of Mo5Si3-xPx from a moderate to an extreme type-II superconductivity.

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