Scanning Gate Microscopy response for local tip potentials beyond perturbation theory

Abstract

We propose an analytical formulation for the Scanning Gate Microscopy (SGM) response to local tips with arbitrary strength in two terminal nano-structures. The real space resolved conductance is expressed in terms of the unperturbed quantities underlying the scattering problem. Providing a non-dynamical approach for obtaining the SGM maps, the proposed expression enables for a significant reduction in the computational cost of SGM response calculations. This feature is particularly advantageous for deep learning-based approaches which have been recently proposed for accessing local properties and disorder landscapes from conductance measurements. This opens up new possibilities for the SGM technique and holds exciting prospects for quantum transport. Further, the formula's versatility extends beyond this specific application, offering a straightforward and computationally efficient method for obtaining the SGM response in a more general context.