Domain control and periodic poling of epitaxial ScAlN

Abstract

ScAlN is an emerging ferroelectric material that possesses large band gap, strong piezoelectricity, and holds great promises for enhanced \chi^{(2)} nonliearity. In this study, we demonstrate high-fidelity ferroelectric domain switching and periodic poling of Al-polar ScAlN thin film epitaxially grown on on c-axis sapphire substrate using gallium nitride as a buffer layer. Uniform poling of ScAlN with periods ranging from 2 um to 0.4 um is realized. The ability to lithographically control the polarization of epitaxial ScAlN presents a critical advance for its further exploitation in ferroelectric storage and nonlinear optics applications.