Multiple scattering of 855 MeV electrons in amorphous and crystalline silicon: simulations versus experiment

Abstract

The angular distribution function of multiple scattering experienced by 855 MeV electrons passing through an amorphous silicon plate and an oriented silicon crystal has been studied by means of relativistic molecular dynamics simulations using two types of the potentials that describe electron-atom interaction. The differences in the angular distributions of the beam particles in both media are analysed. The results obtained are compared to the experimental data and to the results of Monte Carlo simulations.