High-Performance and Low-Power Sub-5 nm Field-Effect Transistors Based on 7-9-7-AGNR

Abstract

Recently, an extremely-air-stable one-dimensional 7-9-7-AGNR was successfully fabricated. To further reveal its potential application in sub-5-nm field-effect transistors (FETs), there is an urgent need to develop integrated circuits. Here, we report first-principles quantum-transport simulations on the performance limits of n- and p-type sub-5-nm one-dimensional 7-9-7-AGNR FET. We find that the on-state current (Ion) in 7-9-7-AGNR FET can be effectively manipulated by the length of the gate and underlap. Particularly, the optimized Ion in n-type (p-type) device can reach up to 2423 (4277) and 1988 (920) {\mu}A/{\mu}m for high-performance and low-power applications, respectively. The large Ion values are in the first class among the LD FETs, which can well satisfy the ITRS requirements. We also find that the 7-9-7-AGNR FET can have ultralow subthreshold swing below 60mV/dev, ultrashort delay time (<0.01 ps), and very small power-delay product (<0.01 fJ/{\mu}m). Our results show that the 7-9-7-AGNR based FETs have great potential applications in the high-speed and low-power consumption chips.