Giant tunneling magnetoresistance in Fe2CrSi/Fe2TiSi/Fe2CrSi magnetic tunnel junction
Abstract
We propose a theoretical model for an all-Heusler magnetic tunnel junction that uses two Heusler compounds: Fe2CrSi and Fe2TiSi, both of which can be experimentally synthesized. Fe2CrSi is a half-metallic ferromagnet, making it a promising material for efficient spin injection in magnetic random access memories and other spin-dependent devices. While, Fe2TiSi is a nonmagnetic semiconductor that has the same lattice structure and comparable lattice constant with Fe2CrSi, as it can be obtained by substituting the Y-site atoms in Fe2CrSi. By using Fe2TiSi as a tunneling barrier sandwiched by two pieces of semi-infinite Fe2CrSi to construct an all-Heusler magnetic tunnel junction, the interface disorder is naturally reduced. Our calculations demonstrate that this magnetic tunnel junction can exhibit a giant tunneling magnetoresistance of up to 109\% and remains robust under finite bias voltage. These characteristics suggest that Fe2CrSi/Fe2TiSi/Fe2CrSi MTJ will be an ideal candidate for future spintronic applications. More importantly, such a device model can keep such a giant tunneling magnetoresistance at and beyond room temperature due to the high Curie temperature of Fe2CrSi.
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