Layer-Locked Anomalous Valley Hall Effect in Two-Dimensional A-Type Tetragonal Antiferromagnetic Insulator

Abstract

Antiferromagnetic (AFM) spintronics provides a route towards energy-efficient and ultrafast device applications. Achieving anomalous valley Hall effect (AVHE) in AFM monolayers is thus of considerable interest for both fundamental condensed matter physics and device enginering. Here we propose a route to achieve AVHE in A-type AFM insulator composed of vertically-stacked monolayer quantum anomalous Hall insulator (QAHI) with strain and electric field modulations. Uniaxial strain and electric field generate valley polarization and spin splitting, respectively. Using first-principles calculations, $\mathrm{Fe_2BrMgP}$ monolayer is predicted to be a prototype A-type AFM hosting \emph{valley-polarized quantum spin Hall insulator} (VQSHI) in which AVHE and quantum spin Hall effect (QSHE) are synergized in a single system. Our findings reveal a route to achieve multiple Hall effects in 2D tetragonal AFM monolayers.